View IRG7PSH50UDPBF_6957604.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

insulated gate bipolar transistor with ultrafast soft recovery diode IRG7PSH50UDPBF 1 www.irf.com 07/28/2010 e g n-channel c v ces = 1200v i nominal = 50a t j(max) = 150c v ce(on) typ. = 1.7v features ? low v ce (on) trench igbt technology ? low switching losses ? square rbsoa ? 100% of the parts tested for i lm ? positive v ce (on) temperature co-efficient ? ultra fast soft recovery co-pak diode ? tight parameter distribution ? lead-free benefits ? high efficiency in a wide range of applications ? suitable for a wide range of switching frequencies due to low v ce (on) and low switching losses ? rugged transient performance for increased reliability ? excellent current sharing in parallel operation applications ? u.p.s. ? welding ? solar inverter ? induction heating gc e gate collector emitter super-247 g c e c absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current (silicon limited) 116 i c @ t c = 100c continuous collector current (silicon limited) 70 i nominal nominal current 50 i cm pulse collector current, v ge = 15v 150 a i lm clamped inductive load current, v ge = 20v 200 i f @ t c = 25c diode continous forward current 116 i f @ t c = 100c diode continous forward current 70 i fm diode maximum forward current 200 v ge continuous gate-to-emitter voltage 30 v p d @ t c = 25c maximum power dissipation 462 w p d @ t c = 100c maximum power dissipation 185 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r jc (igbt) thermal resistance junction-to-case-(each igbt) ??? ??? 0.27 r jc (diode) thermal resistance junction-to-case-(each diode) ??? ??? 0.37 c/w r cs thermal resistance, case-to-sink (flat, greased surface) ??? 0.24 ??? r ja thermal resistance, junction-to-ambient (typical socket mount) ??? 40 ??? pd - 97548
IRG7PSH50UDPBF 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 200h, r g = 5.0 ? . pulse width limited by max. junction temperature. refer to an-1086 for guidelines for measuring v (br)ces safely. r is measured at
electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 ? ? v v ge = 0v, i c = 100a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 1.0 ? v/c v ge = 0v, i c = 1.0ma (25c-150c) v ce(on) collector-to-emitter saturation voltage ? 1.7 2.0 i c = 50a, v ge = 15v, t j = 25c ?2.0? v i c = 50a, v ge = 15v, t j = 150c v ge(th) gate threshold voltage 3.0 ? 6.0 v v ce = v ge , i c = 2.0ma ? v ge(th) / ? tj threshold voltage temp. coefficient ? -17 ? mv/c v ce = v ge , i c = 1.0ma (25c - 150c) gfe forward transconductance ? 55 ? s v ce = 50v, i c = 50a, pw = 30s i ces collector-to-emitter leakage current ? 2.0 100 a v ge = 0v, v ce = 1200v ?3700? v ge = 0v, v ce = 1200v, t j = 150c v fm diode forward voltage drop ? 3.0 3.9 v i f = 50a ?2.7? i f = 50a, t j = 150c i ges gate-to-emitter leakage current ? ? 200 na v ge = 30v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) ? 290 440 i c = 50a q ge gate-to-emitter charge (turn-on) ? 40 60 nc v ge = 15v q gc gate-to-collector charge (turn-on) ? 110 170 v cc = 600v e on turn-on switching loss ? 3600 4600 i c = 50a, v cc = 600v, v ge = 15v e off turn-off switching loss ? 2200 3200 j r g = 5.0 ? , l = 200h,t j = 25c e total total switching loss ? 5800 7800 energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 35 55 t r rise time ?4060ns t d(off) turn-off delay time ? 430 500 t f fall time ? 45 65 e on turn-on switching loss ? 5080 ? i c = 50a, v cc = 600v, v ge =15v e off turn-off switching loss ? 3370 ? j r g =5.0 ? , l=200h, t j = 150c e total total switching loss ? 8450 ? energy losses include tail & diode reverse recovery t d(on) turn-on delay time ? 30 ? t r rise time ? 40 ? ns t d(off) turn-off delay time ? 480 ? t f fall time ? 170 ? c ies input capacitance ? 6000 ? pf v ge = 0v c oes output capacitance ? 300 ? v cc = 30v c res reverse transfer capacitance ? 130 ? f = 1.0mhz t j = 150c, i c = 200a rbsoa reverse bias safe operating area full square v cc = 960v, vp =1200v rg = 5.0 ? , v ge = +20v to 0v erec reverse recovery energy of the diode ? 1510 ? j t j = 150c t rr diode reverse recovery time ? 190 ? ns v cc = 600v, i f = 5.0a i rr peak reverse recovery current ? 5760 ? a r g = 5.0 ? , l =1.0mh conditions
IRG7PSH50UDPBF www.irf.com 3 fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25c, t j 150c; v ge =15v fig. 4 - reverse bias soa t j = 150c; v ge = 20v fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) 25 50 75 100 125 150 t c (c) 0 20 40 60 80 100 120 i c ( a ) 25 50 75 100 125 150 t c (c) 0 100 200 300 400 500 p t o t ( w ) 10 100 1000 10000 v ce (v) 1 10 100 1000 i c ( a ) 0.1 1 10 100 f , frequency ( khz ) 0 20 40 60 80 100 120 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 150c tc = 100c vcc = 600v gate drive as specified power dissipation = 183w i square wave: v cc diode as specified 1 10 100 1000 10000 v ce (v) 0.01 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse dc 1msec
IRG7PSH50UDPBF 4 www.irf.com fig. 5 - typ. igbt output characteristics t j = -40c; tp = 30s fig. 6 - typ. igbt output characteristics t j = 25c; tp = 30s fig. 7 - typ. igbt output characteristics t j = 150c; tp = 30s fig. 8 - typ. diode forward characteristics tp = 30s fig. 10 - typical v ce vs. v ge t j = 25c fig. 9 - typical v ce vs. v ge t j = -40c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v f (v) 0 50 100 150 200 i f ( a ) -40c 25c 150c 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0246810 v ce (v) 0 50 100 150 200 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
IRG7PSH50UDPBF www.irf.com 5 fig. 11 - typical v ce vs. v ge t j = 150c fig. 12 - typ. transfer characteristics v ce = 50v; tp = 30s fig. 13 - typ. energy loss vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 5.0 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 50a; v ge = 15v fig. 16 - typ. switching time vs. r g t j = 150c; l = 200h; v ce = 600v, i ce = 50a; v ge = 15v fig. 14 - typ. switching time vs. i c t j = 150c; l = 200h; v ce = 600v, r g = 5.0 ? ; v ge = 15v 0 5 10 15 20 v ge (v) 0 2 4 6 8 10 12 v c e ( v ) i ce = 25a i ce = 50a i ce = 100a 0246810 v ge , gate-to-emitter voltage (v) 0 50 100 150 200 i c e , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c 0 20 40 60 80 100 i c (a) 0 2000 4000 6000 8000 10000 12000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 i c (a) 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 rg ( ? ) 0 2000 4000 6000 8000 10000 12000 14000 16000 e n e r g y ( j ) e off e on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 s w i c h i n g t i m e ( n s ) t r td off t f td on
IRG7PSH50UDPBF 6 www.irf.com fig. 19 - typ. diode i rr vs. di f /dt v cc = 600v; v ge = 15v; i f = 50a; t j = 150c fig. 20 - typ. diode q rr vs. di f /dt v cc = 600v; v ge = 15v; t j = 150c fig. 17 - typ. diode i rr vs. i f t j = 150c fig. 18 - typ. diode i rr vs. r g t j = 150c fig. 21 - typ. diode e rr vs. i f t j = 150c 0 200 400 600 800 1000 di f /dt (a/s) 1000 2000 3000 4000 5000 6000 7000 8000 9000 q r r ( n c ) 5.0 ? 10 ? 100 ? 47 ? 50a 100a 25a 0 20 40 60 80 100 i f (a) 10 20 30 40 50 60 70 i r r ( a ) r g = 100 ? r g = 5.0 ? r g = 10 ? r g = 47 ? 0 20 40 60 80 100 r g ( ?) 10 20 30 40 50 60 70 i r r ( a ) 0 20 40 60 80 100 i f (a) 0 500 1000 1500 2000 2500 e n e r g y ( j ) r g = 100 ? r g = 47 ? r g = 5.0 ? r g = 10 ? 200 300 400 500 600 700 800 di f /dt (a/s) 20 30 40 50 60 i r r ( a )
IRG7PSH50UDPBF www.irf.com 7 fig. 22 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz fig. 23 - typical gate charge vs. v ge i ce = 50a fig 24. maximum transient thermal impedance, junction-to-case (igbt) fig. 25. maximum transient thermal impedance, junction-to-case (diode) 0 100 200 300 400 500 600 v ce (v) 10 100 1000 10000 c a p a c i t a n c e ( p f ) cies coes cres 0 50 100 150 200 250 300 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 600v v ces = 400v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00463 0.000008 0.07251 0.000209 0.11571 0.002880 0.07714 0.016543 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.00300 0.000014 0.13485 0.000643 0.16061 0.004509 0.07121 0.023154
IRG7PSH50UDPBF 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - resistive load circuit fig.c.t.3 - switching loss circuit fig.c.t.5 - bvces filter circuit 0 1k vcc dut l l rg 80 v dut vcc + - l rg vcc dut / driver diode clamp / dut -5v rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075f d1 22k e force c force e sense
IRG7PSH50UDPBF www.irf.com 9 fig. wf3 - typ. diode recovery waveform @ t j = 150c using fig. ct.4 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 -200 0 200 400 600 800 1000 1200 -0.5 0 0.5 1 1.5 2 time(s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) 90% i ce 5% v ce 5% i ce eoff loss t f -200 0 200 400 600 800 1000 1200 -3 -2 -1 0 1 2 3 4 5 time (s) v ce (v) -20 0 20 40 60 80 100 120 i ce (a) test current 90% tes t cur r ent 5% v ce 10% test current tr eon loss -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 -0.40 -0.20 0.00 0.20 0.40 0.60 time (s) i f (a) peak i rr t rr q rr
IRG7PSH50UDPBF 10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on ir?s web site. super-247 (to-274aa) part marking information assembly lot code top example: this is an irfps37n50a with assembly lot code 1789 international rectifier logo 89 irfps37n50a 17 part number assembled on ww 19, 1997 in the assembly line "c" note: "p" in assembly line position indicates "lead-free" 719c date code year 7 = 1997 week 19 line c

case outline and dimensions ? super-247 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2010

▲Up To Search▲

Price & Availability of IRG7PSH50UDPBF

	To Download IRG7PSH50UDPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .